Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：1.24375 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.97285 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：5.21397 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：4.48925 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

文件：1.1361 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)

文件：117.92 Kbytes 页数：10 Pages

IRF

丝印：DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

文件：309 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel MOSFET

文件：228.83 Kbytes 页数：7 Pages

KEXIN

科信电子

Ultra Low On-Resistance

文件：886.4 Kbytes 页数：10 Pages

KERSEMI

ULTRA LOW ON RESISTANCE

文件：1.38963 Mbytes 页数：11 Pages

IRF