Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：4.48925 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

文件：4.49216 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)

文件：117.92 Kbytes 页数：10 Pages

IRF

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A)

Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024) • St

文件：173.92 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件：1.97285 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

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