Power MOSFET

文件：1.1361 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc P-Channel MOSFET Transistor

文件：321.91 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：4.49216 Mbytes 页数：7 Pages

KERSEMI

丝印：IRFR9024；Package：TO-252；-60V P -Channel Enhancement Mode MOSFET

General Features Vps =-60V Ip=-20A Robson)

文件：1.69025 Mbytes 页数：5 Pages

UMW

友台半导体

丝印：IRFR9024；Package：TO-252；60V P-Channel Enhancement Mode MOSFET

General Features Vos = -60V Ip =-20 A Ros(on)

文件：1.50124 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR9024, SiHFR9024);

Vishay

威世

P-Channel Enhancement Mode Field Effect Transistor

General Description\nThis P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.\nThese MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) • -8.8 A, -60 V. RDS(ON) = 0.28 Ω @ VGS = -10 V\n• Low gate charge.\n• Fast switching speed.\n• High performance technology for low RDS(ON).;

ONSEMI

安森美半导体

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：1.24375 Mbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：1.34872 Mbytes 页数：10 Pages

IRF

ULTRA LOW ON-RESISTANCE

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：5.33157 Mbytes 页数：10 Pages

KERSEMI