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IRFU430A

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU430A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU430A

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU430A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFU430APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFU430APBF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU430APBF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU430APBF

HEXFETPowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFU430APBF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU430APBF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU430APBF

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

IRFU430APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFU430B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFY430

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY430C

N-ChannelMOSFETinaHermeticallysealedTO257ABMetalPackage.

SEME-LAB

Seme LAB

IRFY430C

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY430C

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY430CM

POWERMOSFETN-CHANNEL(BVdss=500V,Rd(on)=1.5ohm,Id=4.5A)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY430M

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRGB430

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IRFR430ATRPBF

  • 功能描述:

    MOSFET N-Chan 500V 5.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Vishay Siliconix
24+
D-Pak
30000
晶体管-分立半导体产品-原装正品
询价
VISHAY
23+
SOT-252
65400
询价
IR/VISH
2020+
TO-252
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
VISHAY/威世
21+
TO-252
36800
进口原装现货 假一赔十
询价
VISHAY/威世
20+
TO-252
300
进口原装假一赔十支持含税
询价
VISHAY
2021+
DPAK
9450
原装现货。
询价
IR/VISHAY
21+
TO-252
6000
原装正品
询价
VISHAY
21+
TO-252-3 (DPAK)
18000
原装正品 有挂有货
询价
VISAYH
2024+实力库存
TO-252
2500
只做原厂渠道 可追溯货源
询价
VISHAY
21+
6000
TO-252-3 (DPAK)
询价
更多IRFR430ATRPBF供应商 更新时间2024-6-14 14:44:00