500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：674.37 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

ONSEMI

安森美半导体

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

文件：18.44 Kbytes 页数：2 Pages

SEME-LAB

N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.

文件：14.79 Kbytes 页数：1 Pages

SEME-LAB

POWER MOSFET THRU-HOLE (TO-257AA)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

文件：172.3 Kbytes 页数：7 Pages

IRF