Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.155 Ω(Typ.)

文件：252.99 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：361.88 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

文件：252.99 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

HEXFET POWER MOSFET

文件：183.34 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

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VISHAYVishay Siliconix

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