Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.)

文件：227.93 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：695.11 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N-CHANNEL MOSFET

N-CHANNEL MOSFET ID 8 A VDSS 500 V Rdson（@Vgs=10V） 0.8 Ω Qg 59 nC FEATURES Low gate charge Low Crss (typical 35pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product APPLICATIONS High efficiency switch mode power supplies

文件：860.15 Kbytes 页数：12 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N-CHANNEL MOSFET

N-CHANNEL MOSFET ID 8 A VDSS 500 V Rdson（@Vgs=10V） 0.8 Ω Qg 59 nC FEATURES Low gate charge Low Crss (typical 35pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product APPLICATIONS High efficiency switch mode power supplies

文件：860.15 Kbytes 页数：12 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司