POWER MOSFET THRU-HOLE (TO-257AA)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

文件：172.3 Kbytes 页数：7 Pages

IRF

Simple Drive Requirements

文件：217.04 Kbytes 页数：7 Pages

IRF

N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.

文件：14.79 Kbytes 页数：1 Pages

SEME-LAB

POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

文件：280.02 Kbytes 页数：6 Pages

IRF

Simple Drive Requirements

文件：217.04 Kbytes 页数：7 Pages

IRF

MOSFETs and JFETs

TT Electronics

Simple Drive Requirements

Infineon

英飞凌

Single channel high reliability power MOSFETs

\n优势:;

Infineon

英飞凌