| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3.8A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. 文件：298.9 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：3.37389 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：853.71 Kbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dynamic dv/dt Rating DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：4.12218 Mbytes 页数：10 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：853.71 Kbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：3.37075 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：3.37389 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：853.71 Kbytes 页数：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：3.37389 Mbytes 页数：7 Pages | KERSEMI | KERSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str 文件：3.37389 Mbytes 页数：7 Pages | KERSEMI | KERSEMI |
详细参数
- 型号：
IRFR224
- 功能描述：
MOSFET N-Chan 250V 3.8 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
06+ |
TO-252 |
15000 |
原装库存 |
询价 | ||
IR |
12+ |
TO-252(DPAK) |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
IOR |
25+ |
TO-252 |
2987 |
绝对全新原装现货供应! |
询价 | ||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
18+ |
TO-252 |
41200 |
原装正品,现货特价 |
询价 | ||
IR/VISHAY |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
VISHAY |
25+ |
TO-252 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
25+ |
SOT-252 |
10000 |
原装现货假一罚十 |
询价 | ||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 |
相关规格书
更多- IRFR224PBF
- IRFR224TRPBF
- IRFR2307ZTRLPBF
- IRFR2405TRLPBF
- IRFR2405TRPBF-CUTTAPE
- IRFR2407TRLPBF
- IRFR24N15DPBF
- IRFR2905ZHR
- IRFR2905ZTRLPBF
- IRFR310BTM
- IRFR310TRLPBF
- IRFR320
- IRFR320TF
- IRFR320TRPBF
- IRFR3303PBF
- IRFR3303TRPBF
- IRFR3410TRLPBF
- IRFR3410TRPBF
- IRFR3411TRPBF
- IRFR3504ZTRPBF
- IRFR3505TRPBF
- IRFR3518PBF
- IRFR3607PBF
- IRFR3607TRPBF/BKN
- IRFR3704HR
- IRFR3704ZPBF
- IRFR3704ZTRPBF
- IRFR3707TRLPBF
- IRFR3707ZTR
- IRFR3707ZTRPBF
- IRFR3708TRLPBF
- IRFR3709ZPBF
- IRFR3709ZTRPBF
- IRFR3710ZPBF
- IRFR3710ZTRPBF
- IRFR3711ZTRLPBF
- IRFR3806PBF
- IRFR3910HR
- IRFR3910TRLPBF
- IRFR3910TRPBF
- IRFR4104TRPBF
- IRFR4105TRLPBF
- IRFR4105ZPBF
- IRFR420APBF
- IRFR420B
相关库存
更多- IRFR224TRLPBF
- IRFR2307ZPBF
- IRFR2405PBF
- IRFR2405TRPBF
- IRFR2407PBF
- IRFR2407TRPBF
- IRFR24N15DTRPBF
- IRFR2905ZPBF
- IRFR2905ZTRPBF
- IRFR310PBF
- IRFR310TRPBF
- IRFR320PBF
- IRFR320TRLPBF
- IRFR320TRPBF-CUTTAPE
- IRFR3303TR
- IRFR3410PBF
- IRFR3410TRLPBF-CUTTAPE
- IRFR3411PBF
- IRFR3504ZPBF
- IRFR3505PBF
- IRFR3518HR
- IRFR3518TRPBF
- IRFR3607TRPBF
- IRFR3704
- IRFR3704TRLPBF
- IRFR3704ZTRLPBF
- IRFR3706TRLPBF
- IRFR3707ZPBF
- IRFR3707ZTRLPBF
- IRFR3708PBF
- IRFR3708TRPBF
- IRFR3709ZTRLPBF
- IRFR3709ZTRPBF-CUTTAPE
- IRFR3710ZTRLPBF
- IRFR3711TRPBF
- IRFR3711ZTRPBF
- IRFR3806TRPBF
- IRFR3910PBF
- IRFR3910TRLPBF-CUTTAPE
- IRFR4104PBF
- IRFR4105PBF
- IRFR4105TRPBF
- IRFR4105ZTRPBF
- IRFR420ATRPBF
- IRFR420PBF
