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IRFR224TRLA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

文件:3.37075 Mbytes 页数:7 Pages

KERSEMI

IRFR224TRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

文件:853.71 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR224TRLPBFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

文件:3.37075 Mbytes 页数:7 Pages

KERSEMI

IRFR224TRLPBFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

文件:3.37389 Mbytes 页数:7 Pages

KERSEMI

IRFR224TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

文件:853.71 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR224TRPBFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

文件:3.37075 Mbytes 页数:7 Pages

KERSEMI

IRFR224TRPBFA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The str

文件:3.37389 Mbytes 页数:7 Pages

KERSEMI

IRFR224A

isc N-Channel MOSFET Transistor

文件:321.73 Kbytes 页数:2 Pages

ISC

无锡固电

IRFR224PBF

Power MOSFET

文件:368.2 Kbytes 页数:13 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRFR224PBF

HEXFET Power MOSFET

文件:511.42 Kbytes 页数:10 Pages

IRF

详细参数

  • 型号:

    IRFR224

  • 功能描述:

    MOSFET N-Chan 250V 3.8 Amp

  • RoHS:

    否

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
06+
TO-252
15000
原装库存
询价
IR
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
询价
IOR
25+
TO-252
2987
绝对全新原装现货供应!
询价
IR
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
18+
TO-252
41200
原装正品,现货特价
询价
IR/VISHAY
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
询价
VISHAY
25+
TO-252
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO-252
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
25+
SOT-252
10000
原装现货假一罚十
询价
Vishay Siliconix
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原厂渠道,现货配单
询价
更多IRFR224供应商 更新时间2026-10-10 15:31:00