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IRFR210BTF

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

文件:1.37366 Mbytes 页数:5 Pages

Bychip

百域芯

IRFR210BTM

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

文件:1.37367 Mbytes 页数:5 Pages

Bychip

百域芯

IRFR210PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:4.91599 Mbytes 页数:7 Pages

KERSEMI

IRFR210PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:2.39965 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR210PBF

HEXFET POWER MOSFET

文件:2.15484 Mbytes 页数:10 Pages

IRF

IRFR210TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:2.39965 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR210TRA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:4.91599 Mbytes 页数:7 Pages

KERSEMI

IRFR210TRL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:2.39965 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRFR210TRLA

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:4.91599 Mbytes 页数:7 Pages

KERSEMI

IRFR210TRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th

文件:2.39965 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRFR210

  • 功能描述:

    MOSFET N-Chan 200V 2.6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO 252
161396
明嘉莱只做原装正品现货
询价
IR
24+/25+
105
原装正品现货库存价优
询价
IR
05+
TO-252
15000
原装进口
询价
IR
25+
TO263-2.5
18000
原厂直接发货进口原装
询价
IR
24+
TO-252
57200
新进库存/原装
询价
IR
24+
原厂封装
2845
原装现货假一罚十
询价
IR
24+
TO-252
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
IR
25+
TO-252
15150
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
23+
TO-252
5000
原装正品,假一罚十
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
更多IRFR210供应商 更新时间2025-12-10 13:38:00