Power MOSFET

文件：834.32 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：834.32 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：834.32 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：834.32 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

200V N-Channel MOSFET

General Description\nThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.\nThis advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high • 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V\n• Low gate charge ( typical 7.2 nC)\n• Low Crss ( typical 6.8 pF)\n• Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability;

ONSEMI

安森美半导体