IRFM140

HEXFETTRANSISTOR

100Volt,0.077OhmHEXFET TheHEXFET®technologyisthekeytointernationalRectifiersadvancelineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. FEATURES: ■RepetitiveAvalancheRating ■IsolatedandHer

IRFM140

N-CHANNELPOWERMOSFET

IRFM140

SimpleDriveRequirements

IRFN140

POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.077ohm,Id=28A)

RDS(on)0.077Ω ID28A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi

IRFN140

SimpleDriveRequirements

IRFN140SMD

N-CHANNELPOWERMOSFET

IRFP140

31A,100V,0.077Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRFP140

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud

IRFP140

PowerMOSFET

IRFP140

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES •DrainCurrent–ID=31A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) •SOAispowerdissipati