型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件:2.30422 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A) Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:311.01 Kbytes 页数:10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit 文件:2.30422 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:109.06 Kbytes 页数:8 Pages | IRF | IRF | ||
丝印:F9Z24N;Package:TO-220;-55V P-Channel MOSFET Features VDS (V) =-55V ID = -12A (VGS = -10V) RDS(ON) 文件:550.05 Kbytes 页数:8 Pages | UMW 友台半导体 | UMW | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:179.21 Kbytes 页数:11 Pages | IRF | IRF | ||
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:168.45 Kbytes 页数:10 Pages | IRF | IRF | ||
HEXFET Power MOSFET
文件:394.15 Kbytes 页数:11 Pages | IRF | IRF | ||
HEXFET Power MOSFET
文件:2.35591 Mbytes 页数:8 Pages | IRF | IRF | ||
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件:168.45 Kbytes 页数:10 Pages | IRF | IRF |
技术参数
- OPN:
IRF9Z24NPBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
-55 V
- RDS (on) @10V max:
175 mΩ
- ID @25°C max:
-12 A
- QG typ @10V:
12.7 nC
- Polarity:
P
- VGS(th) min:
-2 V
- VGS(th) max:
-4 V
- VGS(th):
-3 V
- Technology:
IR MOSFET™
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
25+ |
TO-220 |
20300 |
IR原装特价IRF9Z24即刻询购立享优惠#长期有货 |
询价 | ||
IR |
24+ |
TO 220 |
160872 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
INTERNATIONA |
05+ |
原厂原装 |
4234 |
只做全新原装真实现货供应 |
询价 | ||
IR |
24+/25+ |
50 |
原装正品现货库存价优 |
询价 | |||
IR |
24+ |
TO-220 |
3 |
询价 | |||
IR |
DIP |
1200 |
正品原装--自家现货-实单可谈 |
询价 | |||
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 |
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