首页 >IRF9Z24>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IRF9Z24L

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件:2.30422 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRF9Z24L

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:311.01 Kbytes 页数:10 Pages

IRF

IRF9Z24LPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

文件:2.30422 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRF9Z24N

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:109.06 Kbytes 页数:8 Pages

IRF

IRF9Z24N

丝印:F9Z24N;Package:TO-220;-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -12A (VGS = -10V) RDS(ON)

文件:550.05 Kbytes 页数:8 Pages

UMW

友台半导体

IRF9Z24NL

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:179.21 Kbytes 页数:11 Pages

IRF

IRF9Z24NL

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:168.45 Kbytes 页数:10 Pages

IRF

IRF9Z24NLPBF

HEXFET Power MOSFET

文件:394.15 Kbytes 页数:11 Pages

IRF

IRF9Z24NPBF

HEXFET Power MOSFET

文件:2.35591 Mbytes 页数:8 Pages

IRF

IRF9Z24NS

Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:168.45 Kbytes 页数:10 Pages

IRF

技术参数

  • OPN:

    IRF9Z24NPBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    -55 V

  • RDS (on) @10V max:

    175 mΩ

  • ID @25°C max:

    -12 A

  • QG typ @10V:

    12.7 nC

  • Polarity:

    P

  • VGS(th) min:

    -2 V

  • VGS(th) max:

    -4 V

  • VGS(th):

    -3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
25+
TO-220
20300
IR原装特价IRF9Z24即刻询购立享优惠#长期有货
询价
IR
24+
TO 220
160872
明嘉莱只做原装正品现货
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
INTERNATIONA
05+
原厂原装
4234
只做全新原装真实现货供应
询价
IR
24+/25+
50
原装正品现货库存价优
询价
IR
24+
TO-220
3
询价
IR
DIP
1200
正品原装--自家现货-实单可谈
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IR
16+
TO-220
10000
全新原装现货
询价
更多IRF9Z24供应商 更新时间2025-10-5 14:14:00