P-CHANNEL POWER MOSFETs

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability

文件：287.18 Kbytes 页数：5 Pages

Samsung

三星

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件：1.81473 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

POWER MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

文件：174.81 Kbytes 页数：6 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -11A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.1 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：280.77 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：277.52 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：158.74 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• P-channel;

Vishay

威世科技

POWER MOSFET

Infineon

英飞凌

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

文件：825.68 Kbytes 页数：8 Pages

KERSEMI