P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：20.72 Kbytes 页数：2 Pages

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文件：21.7 Kbytes 页数：2 Pages

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文件：16.9 Kbytes 页数：2 Pages

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FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：378.27 Kbytes 页数：6 Pages

SAMSUNG

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文件：459.25 Kbytes 页数：6 Pages

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