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IRF9520N

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:95.8 Kbytes 页数:8 Pages

IRF

IRF9520NL

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:155.56 Kbytes 页数:10 Pages

IRF

IRF9520NL

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件:1.16491 Mbytes 页数:10 Pages

KERSEMI

IRF9520NPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:2.90404 Mbytes 页数:8 Pages

KERSEMI

IRF9520NPBF

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:156.72 Kbytes 页数:8 Pages

IRF

IRF9520NS

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件:1.06139 Mbytes 页数:10 Pages

KERSEMI

IRF9520NS

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:155.56 Kbytes 页数:10 Pages

IRF

IRF9520NSPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:415.04 Kbytes 页数:10 Pages

IRF

IRF9520NL

Advanced Process Technology

文件:166.41 Kbytes 页数:11 Pages

IRF

IRF9520NPBF

ADVANCED PROCESS TECHNOLOGY

文件:165.67 Kbytes 页数:9 Pages

IRF

技术参数

  • OPN:

    IRF9520NPBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    -100 V

  • RDS (on) @10V max:

    480 mΩ

  • ID @25°C max:

    -6.8 A

  • QG typ @10V:

    18 nC

  • Polarity:

    P

  • VGS(th) min:

    -2 V

  • VGS(th) max:

    -4 V

  • VGS(th):

    -3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
25+
TO-220
20300
IR原装特价IRF9520N即刻询购立享优惠#长期有货
询价
IR
24+
TO-220
15
只做原厂渠道 可追溯货源
询价
IR
17+
TO-220AB
31518
原装正品 可含税交易
询价
INFINEON/英飞凌
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
询价
IR
2015+
TO-220AB
12500
全新原装,现货库存长期供应
询价
IR
2015+
TO-220
19889
一级代理原装现货,特价热卖!
询价
IR
24+
TO-220AB
8866
询价
IR
17+
TO-220
6200
询价
IR
24+
原厂封装
1392
原装现货假一罚十
询价
IR
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
询价
更多IRF9520N供应商 更新时间2025-10-8 14:14:00