IRF9520NS中文资料PDF规格书
IRF9520NS规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced Process Technology
• Surface Mount (IRF9520S)
• Low-profile through-hole (IRF9520L)
• 175°C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
产品属性
- 型号:
IRF9520NS
- 功能描述:
MOSFET P-CH 100V 6.8A D2PAK
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IR |
23+ |
TO-263 |
1800 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
IR |
08+(pbfree) |
D2-Pak |
8866 |
询价 | |||
IR |
2023+ |
TO-263 |
16800 |
芯为只有原装,公司现货 |
询价 | ||
IR/INFINEON |
22+21+ |
TO-263 |
6455 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
23+ |
N/A |
35900 |
正品授权货源可靠 |
询价 | |||
IR |
23+ |
D2-Pak |
7600 |
全新原装现货 |
询价 | ||
Infineon Technologies |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
VBSEMI/台湾微碧 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
23+24 |
D2-Pak |
49820 |
主营全系列二三极管、MOS场效应管、 |
询价 |