IRF9520NS中文资料IRF数据手册PDF规格书
IRF9520NS规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced Process Technology
• Surface Mount (IRF9520S)
• Low-profile through-hole (IRF9520L)
• 175°C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
产品属性
- 型号:
IRF9520NS
- 功能描述:
MOSFET P-CH 100V 6.8A D2PAK
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
5700 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
IR |
24+ |
D2-Pak |
8866 |
询价 | |||
IR |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
25+ |
TO-263 |
2125 |
全新原装正品支持含税 |
询价 | ||
IR |
18+ |
TO-263 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
7000 |
询价 | |||
Infineon Technologies |
2022+ |
TO-263-3,D2Pak(2 引线 + 接片 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IR |
1923+ |
TO263 |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
询价 |


