Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：155.56 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件：1.06139 Mbytes 页数：10 Pages

KERSEMI

Advanced Process Technology

文件：166.41 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：415.04 Kbytes 页数：10 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：424.17 Kbytes 页数：11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：424.17 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：166.41 Kbytes 页数：11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：424.17 Kbytes 页数：11 Pages

IRF

采用 D2-Pak 封装的 -100V 单 P 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Infineon

英飞凌