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IRF830B

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830BPBF

DSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830F

4.4A,500V,1.5廓N-CHANNELPOWERMOSFET

DESCRIPTION ➤IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecove

FS

First Silicon Co., Ltd

IRF830FI

iscN-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent–ID=3.0A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) •FastSwitchingSpeed •SimpleDriveRequirements APPLICATIONS •Desingedforhighefficiencyswitchmodepowersupply.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF830FP

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

SUNTAC

Suntac Electronic Corp.

IRF830FP

4.5A500VNCHANNELPOWERMOSFET

FCIFirst Components International

戈采戈采企业股份有限公司

IRF830I-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220CFMisolationpackageiswidelypreferredforcommercialindustrialthroughholeapplications. ▼EaseofParalleling ▼FastSwitchingChar

A-POWERAdvanced Power Electronics Corp.

富鼎先进电子富鼎先进电子股份有限公司

IRF830L

PowerMOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

IRF830LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF830PBF

HEXFETPowerMOSFET

IRF

International Rectifier

详细参数

  • 型号:

    IRF830ASPBF

  • 功能描述:

    MOSFET N-Chan 500V 5.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2016+
TO-263
6528
房间原装进口现货假一赔十
询价
Vishay
24+
NA
3601
进口原装正品优势供应
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
TO-263
8650
受权代理!全新原装现货特价热卖!
询价
vishay
23+
NA
4286
专做原装正品,假一罚百!
询价
IR
25+23+
TO-263
28216
绝对原装正品全新进口深圳现货
询价
VI1
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY
1809+
TO-263
3675
就找我吧!--邀您体验愉快问购元件!
询价
IR
1923+
TO-263
6896
原装进口现货库存专业工厂研究所配单供货
询价
VB
21+
D2PAK
10000
原装现货假一罚十
询价
更多IRF830ASPBF供应商 更新时间2025-7-25 18:34:00