Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：134.61 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)

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HEXFET POWER MOSFET ( VDSS = -20V , RDS(on) = 0.09廓 )

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：508.56 Kbytes 页数：8 Pages

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