丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

文件：2.30446 Mbytes 页数：11 Pages

UMW

友台半导体

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

文件：2.3004 Mbytes 页数：11 Pages

EVVOSEMI

翊欧

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

文件：2.30446 Mbytes 页数：11 Pages

UMW

友台半导体

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

文件：2.30446 Mbytes 页数：11 Pages

UMW

友台半导体

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

文件：2.30446 Mbytes 页数：11 Pages

UMW

友台半导体

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

文件：2.3004 Mbytes 页数：11 Pages

EVVOSEMI

翊欧

Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

文件：2.3004 Mbytes 页数：11 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

文件：162.21 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

文件：2.09404 Mbytes 页数：11 Pages

IRF

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.44944 Mbytes 页数：14 Pages

VBSEMI

微碧半导体