| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Advanced Process Technology Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de 文件：1.07275 Mbytes 页数：10 Pages | KERSEMI | KERSEMI | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：269.4 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：134.58 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：269.4 Kbytes 页数：10 Pages | IRF | IRF | ||
Advanced Process Technology Ultra Low On-Resistance Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：4.24691 Mbytes 页数：10 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.64052 Mbytes 页数：12 Pages | KERSEMI | KERSEMI | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：272.67 Kbytes 页数：12 Pages | IRF | IRF | ||
Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：272.67 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.64052 Mbytes 页数：12 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET (75V, 94mOHM, 75A) Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb 文件：279.79 Kbytes 页数：12 Pages | IRF | IRF |
技术参数
- OPN：
IRF2807PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
75 V
- RDS (on) @10V max：
13 mΩ
- ID @25°C max：
82 A
- QG typ @10V：
106.7 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思达科技有限公司主营IR系列,现货供应IRF2807,全新原装,正品供应。 |
询价 | ||
INFINEON/英飞凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飞凌原装特价IRF2807即刻询购立享优惠#长期有货 |
询价 | ||
IR |
23+ |
TO220AB |
56000 |
询价 | |||
IR |
24+ |
TO 220 |
161152 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
24+ |
TO-220 |
48650 |
原装正品 特价现货(香港 新加坡 日本) |
询价 | ||
IR |
2012 |
TO-220 |
5 |
全新原装正品现货 |
询价 | ||
IR |
1200 |
盈芯辞旧，利信E界，进口原装现货，质量保证。
|
询价 | ||||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
06+ |
TO-220 |
8000 |
自己公司全新库存绝对有货 |
询价 |
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