Power MOSFET(Vdss=75V, Id=82A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

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IRF

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ● Advanced Process Te

文件：768.71 Kbytes 页数：8 Pages

KERSEMI

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

etc2List of Unclassifed Manufacturers

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N-Channel MOSFET Transistor

文件：338.77 Kbytes 页数：2 Pages

ISC

无锡固电

采用 TO-220 封装的 75V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n \n  ;

Infineon

英飞凌

Advanced Process Technology

Description Advanced MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the de

文件：1.1772 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：134.58 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：269.4 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：269.4 Kbytes 页数：10 Pages

IRF

Advanced Process Technology Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：4.24691 Mbytes 页数：10 Pages

KERSEMI