Static Drain-Source On-Resistance

DESCRIPTION • Drain Current ID=13A@ TC=25℃ • Drain Source Voltage- : VDSS= 250V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.28Ω(Max) APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver • Audio amplifier and servo motors

文件：48.33 Kbytes 页数：2 Pages

ISC

无锡固电

14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：70.67 Kbytes 页数：7 Pages

Intersil

14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：70.67 Kbytes 页数：7 Pages

Intersil

Inductors, Epoxy Conformal Coated, Axial Leaded

FEATURES • High performance ferrite core is used in this epoxy conformally coated choke which allows for inductance values to 1000 μH • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies • Treated with epoxy resin

文件：54.95 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世威世科技公司

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

18A, 200V, 0.180 Ohm, N-Channel Power MOSFET

文件：59.29 Kbytes 页数：7 Pages

Intersil

Repetitive Avalanche Ratings

文件：150.3 Kbytes 页数：7 Pages

IRF

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：19.38 Kbytes 页数：2 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

文件：111.97 Kbytes 页数：3 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

文件：111.97 Kbytes 页数：3 Pages

SEME-LAB