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IRF240

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

文件:140.72 Kbytes 页数:5 Pages

Fairchild

仙童半导体

IRF240

N-CHANNEL POWER MOSFET

FEATURES • Low RDs

文件:211.06 Kbytes 页数:5 Pages

Samsung

三星

IRF240

REPETITIVE AVALANCHE AND dv/dt RATED

Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state res

文件:149.25 Kbytes 页数:7 Pages

IRF

IRF240

Static Drain-Source On-Resistance

DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors

文件:48.28 Kbytes 页数:2 Pages

ISC

无锡固电

IRF240

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-sta

文件:101.73 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF240-243

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

文件:140.72 Kbytes 页数:5 Pages

Fairchild

仙童半导体

IRF240R

Avalanche Energy Rated N-Channel Power MOSFETs

Avalanche Energy Rated N-Channel Power MOSFETs The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field

文件:168.9 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF241

Static Drain-Source On-Resistance

DESCRIPTION • Drain Current ID=18A@ TC=25℃ • Drain Source Voltage : VDSS= 150V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver • Audio amplifier and servo motors

文件:48.31 Kbytes 页数:2 Pages

ISC

无锡固电

IRF241

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

文件:140.72 Kbytes 页数:5 Pages

Fairchild

仙童半导体

IRF241

N-CHANNEL POWER MOSFET

FEATURES • Low RDs

文件:211.06 Kbytes 页数:5 Pages

Samsung

三星

技术参数

  • Maximum Drain Source Voltage:

    200V

  • Maximum Continuous Drain Current:

    16A

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
24+
TO-204
7793
支持大陆交货,美金交易。原装现货库存。
询价
IR
24+
TO-3
10000
询价
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
询价
UNMARKED
11
全新原装 货期两周
询价
IR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
IR
22+
TO-3
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-3
52735
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
SGS THOMSON
2023+环保现货
标准封装
2500
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
GE
2025+
TO-2P
3550
全新原厂原装产品、公司现货销售
询价
IR
23+
TO-3
8000
专注配单,只做原装进口现货
询价
更多IRF24供应商 更新时间2025-12-17 10:22:00