Nanosecond Switching Speeds

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：135.19 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：68.86 Kbytes 页数：7 Pages

Intersil

N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

文件：165.53 Kbytes 页数：5 Pages

Fairchild

仙童半导体

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs

文件：209.79 Kbytes 页数：5 Pages

Samsung

三星

Nanosecond Switching Speeds

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：135.19 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HEXFET TRANSISTORS

250V 1.1 ohm HEXFET

文件：398.88 Kbytes 页数：6 Pages

IRF

HEXFET TRANSISTORS

250V 1.1 ohm HEXFET

文件：398.88 Kbytes 页数：6 Pages

IRF

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Power Mosfets

文件：154.1 Kbytes 页数：5 Pages

ARTSCHIP

Advanced Process Technology

文件：263.64 Kbytes 页数：9 Pages

IRF