IRC40SN40M1PA

Proximity inductive sensors with rectangular housing and 5 positions rotatable head

Description Inductiveproximitysensorswith40mmx40mm rectangularhousingsforuseinharshambient conditionstodetectmetalobjectswithoutcontact andwear-free. Thesensorsgenerateanelectromagneticfield whichinteractswiththedetectedobjectandare characterizedbyalongs

IRC503

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

HEXFET®PowerMOSFET VDSS=100V RDS(on)=0.16Ω ID=14A

IRC530

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

HEXFET®PowerMOSFET VDSS=100V RDS(on)=0.16Ω ID=14A

IRC540

Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A)

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077Ohm

IRC540PBF

HEXFET POWER MOSFET ( VDSS=100V , RDS(on)=0.077廓 , ID=28A )

Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077OhmLead-Free

IRC60

compact type metal clad wire wound resistors

[RaRaohm] CompactTypeMetalCladWireWoundResistors

IRC630PBF

HEXFET POWER MOSFET

HEXFET®PowerMOSFET

IRC634

Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)

HEXFETPowerMOSFET

IRC640

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease

IRC640PBF

HEXFET POWER MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •Dynamicdv/dtRating •RepetitiveAvalancheRated •CurrentSense •FastSwitching •Ease