Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Current Sense • Fast Switching • Ease

文件：228.9 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Infineon

英飞凌

HEXFET POWER MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Current Sense • Fast Switching • Ease

文件：1.13633 Mbytes 页数：9 Pages

IRF

MOSFET N-CH 200V 18A TO-220-5

Vishay

威世科技