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型号	下载订购	功能描述	制造商上传企业	LOGO
IR213	文件：917.26 Kbytes Page：36 Pages	600 V three-phase gate driver IC with OCP, Enable, and Fault Description The IR2136x (J&S) are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or L 文件：917.26 Kbytes 页数：36 Pages	Infineon 英飞凌	Infineon
IR2130	文件：306.27 Kbytes Page：26 Pages	3-PHASE BRIDGE DRIVER Description The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down 文件：306.27 Kbytes 页数：26 Pages	Infineon 英飞凌	Infineon
IR2130	文件：639.79 Kbytes Page：21 Pages	3-PHASE BRIDGE DRIVER Description The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down 文件：639.79 Kbytes 页数：21 Pages	IRF	IRF
IR21303C	文件：247.18 Kbytes Page：21 Pages	3-PHASE BRIDGE DRIVER Description The IR21303C is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V l 文件：247.18 Kbytes 页数：21 Pages	IRF	IRF
IR2130D	文件：170.13 Kbytes Page：21 Pages	3-PHASE DRIVER DESCRIPION The IR2130D is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with 5V CMOS or LSTTL outputs. A g 文件：170.13 Kbytes 页数：21 Pages	IRF	IRF
IR2130J	文件：306.27 Kbytes Page：26 Pages	3-PHASE BRIDGE DRIVER Description The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down 文件：306.27 Kbytes 页数：26 Pages	Infineon 英飞凌	Infineon
IR2130S	文件：306.27 Kbytes Page：26 Pages	3-PHASE BRIDGE DRIVER Description The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down 文件：306.27 Kbytes 页数：26 Pages	Infineon 英飞凌	Infineon
IR2131	文件：595.66 Kbytes Page：10 Pages	3 HIGH SIDE AND 3 LOW SIDE DRIVER Description The IR2131(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V 文件：595.66 Kbytes 页数：10 Pages	Infineon 英飞凌	Infineon
IR2131	文件：299.72 Kbytes Page：8 Pages	3 HIGH SIDE AND 3 LOW SIDE DRIVER Description The IR2131(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V 文件：299.72 Kbytes 页数：8 Pages	IRF	IRF
IR2131J	文件：595.66 Kbytes Page：10 Pages	3 HIGH SIDE AND 3 LOW SIDE DRIVER Description The IR2131(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V 文件：595.66 Kbytes 页数：10 Pages	Infineon 英飞凌	Infineon

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技术参数

Product Status：
active
Voltage Class：
600 V
Output Current Source min：
0.2 A
Output Current Source：
0.25 A
Output Current Sink min：
0.42 A
Output Current Sink：
0.5 A
Channels：
6
Configuration：
Three Phase
Qualification：
Industrial
Isolation Type：
Functional levelshift
Switch Type：
IGBT/MOSFET
Package name：
PDIP28
UVLO Input Off：
8.7 V
UVLO Output Off：
7.95 V
Turn On Propagation Delay max：
850 ns
Turn On Propagation Delay：
675 ns
Turn On Propagation Delay min：
500 ns
Turn Off Propagation Delay max：
550 ns
Turn Off Propagation Delay：
425 ns
Turn Off Propagation Delay min：
300 ns
Input Vcc min：
10 V
Input Vcc max：
20 V
Output Vbs min：
10 V
Output Vbs max：
20 V
Rise Time max：
125 ns
Rise Time：
80 ns
Fall Time max：
55 ns
Fall Time：
35 ns
UVLO Input On：
9 V
UVLO Output On：
8.35 V

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福安瓯科技有限公司	IR2130	IR	25+	DIP28L	3000	强调现货,随时查询!	询价
深圳市星佑电子有限公司	IR2131STRPBF	IR	18+	SOP28	1146	一个电话就有货,价格很低	询价
深圳市正纳电子有限公司	IR2130JPBF	IR	ROHS+Original	NA	513	专业电子元器件供应链/QQ 350053121 /正纳电子	询价
千层芯半导体(深圳)有限公司	IR2130STRPBF	VISHAY	24+	SOP-28	12000	VISHAY专营进口原装现货假一赔十	询价
深圳市艾宇欣科技有限公司	IR2132STRPBF	Infineon	1931+	N/A	1093	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市能元时代电子有限公司	IR2131S	IR	23+		33522	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市斌能达电子科技有限公司	IR2136SPBF	Infineon/英飞凌	24+	SOIC-28W	6000	全新原装深圳仓库现货有单必成	询价
深圳市赛特兴科技有限公司	IR2136JPBF	Infineon(英飞凌)	23+	标准封装	7000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
深圳市鑫炜纳电子有限公司	IR2136STRPBF	IR	2022+		7600	原厂原装,假一罚十	询价
深圳市纳睿斯电子科技有限公司	IR2133SPBF	Infineon Technologies	25+		30000	原装现货,支持实单	询价

更多IR213供应商更新时间2025-12-13 11:02:00

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