Description

The IR2131(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. A shutdown input is provided for a customized shutdown function. An open drain FAULT signal is provided to indicate that any of the shutdowns has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.

Features

• Floating channel designed for bootstrap operation

   Fully operational to +600V Tolerant to negative

   transient voltage dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for all channels

• Over-current shutdown turns off all six drivers

• Independent 3 high side & 3 low side drivers

• Matched propagation delay for all channels

• 2.5V logic compatible

• Outputs out of phase with inputs

• 28-Lead SOIC & 44-Lead PLCC are also

   available in Lead-Free.

IR2131属于集成电路（IC） > 栅极驱动器。英飞凌科技公司制造生产的IR2131栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。