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IIPD65R600C6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPP65R600C6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPA65R600C6

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB65R600C6

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD65R600C6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD65R600C6

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD65R600C6

650VCoolMOSC6PowerTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPI65R600C6

iscN-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice p

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IPI65R600C6ZZ

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    COOL MOS

供应商型号品牌批号封装库存备注价格
INFINEON
23+
8000
专注配单,只做原装进口现货
询价
INFINEON
23+
8000
专注配单,只做原装进口现货
询价
INFINEON
23+
7000
询价
INFINEON/英飞凌
23+
TO-262
50000
全新原装正品现货,支持订货
询价
INFINE0N
23+
TO-262-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINEON/英飞凌
22+
TO262
92902
询价
Infineon
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
INFINEON
1809+
TO262-3
3675
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
493
加我QQ或微信咨询更多详细信息,
询价
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
询价
更多IPI65R600C6ZZ供应商 更新时间2025-5-29 15:01:00