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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IPI65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650V CoolMOS CFD Power Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPI65R660CFD	文件：4.46997 Mbytes Page：21 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPI65R660CFD	文件：330.89 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP65R660CFD	文件：338.51 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPP65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPP65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPW65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPW65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPW65R660CFD	文件：334.83 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤660mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

详细参数

型号：
IPI65R660CFD
功能描述：
MOSFET Infineon COOL MOS
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市华来深电子有限公司	IPI65R660CFD	INFINE0N	23+	TO-262-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市创新迹电子有限公司	IPI65R660CFD	INFINEON	23+	TO-262	8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IPI65R660CFD	INFINEON	23+	TO-262	8000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	IPI65R660CFD	INFINEON	23+	TO-262	7000		询价
深圳和润天下电子科技有限公司	IPI65R660CFD	INFINEON/英飞凌	22+	TO262	92902		询价
深圳市艾宇欣科技有限公司	IPI65R660CFDXKSA1	Infineon	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IPI65R660CFDXKSA1	INFINEON	1809+	TO262-3	3675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	IPI65R660CFDXKSA1	Infineon	22+	NA	493	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	IPI65R660CFDXKSA1	Infineon Technologies	22+	TO2623 Long Leads I2Pak TO262A	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IPI65R660CFDXKSA1	Infineon Technologies	21+	TO2623 Long Leads I2Pak TO262A	13880	公司只售原装,支持实单	询价

更多IPI65R660CFD供应商更新时间2025-5-16 14:59:00

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