IPI65R660CFD中文资料500 V-950 V CoolMOS™ N 沟道功率 MOSFET数据手册Infineon规格书

描述 Description

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7
650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

特性 Features

• 650V technology with integrated fast body diode
• Limited voltage overshoot during hard commutation
• Significant Qg reduction compared to 600V CFD technology
• Tighter RDS(on) max to RDS(on) typ window
• Easy to design-in
• Lower price compared to 600V CFD technology

优势:
• Low switching losses due to low Qrr at repetitive commutation on body diode
• Self limiting di/dt and dv/dt
• Low Qoss
• Reduced turn on and turn of delay times
• Outstanding CoolMOS™ quality

应用 Application

• Telecom
• Server
• Solar
• HID lamp ballast
• LED lighting
• eMobility