丝印：041N12N；Package：PG-TO262-3；N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

文件：878.72 Kbytes 页数：11 Pages

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isc N-Channel MOSFET Transistor

文件：331.11 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：038N12N；Package：PG-TO263-3；OptiMOSTM3 Power-Transistor

文件：507.87 Kbytes 页数：11 Pages

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N 沟道功率 MOSFET

The 120V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilites for optimized solutions. • Excellent switching performance\n• World’s lowest R DS(on)\n• Very low Q g and Q gd\n• Excellent gate charge x R DS(on) product (FOM)\n• RoHS compliant-halogen free\n• MSL1 rated 2\n\n优势:\n• Environmentally friendly\n• Increased efficiency\n• Highest power density\n• Less paralleling required\n• S;

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