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IPI50R299CP

CoolMOS Power Transistor

Features •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard-&softswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPI50R299CP

isc N-Channel MOSFET Transistor

•DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.299Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP50R299CP

N-ChannelMOSFETTransistor

•DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.299Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP50R299CP

CoolMOSTMPowerTransistor

Features •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard-&softswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPW50R299CP

N-ChannelMOSFETTransistor

•DESCRITION •HighPeakCurrentCapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤299mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPW50R299CP

CoolMOSTMPowerTransistorFeaturesExtremedv/dtratedHighpeakcurrentcapability

Features •LowestfigureofmeritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Pb-freeleadplating;RoHScompliant •QuailfiedaccordingtoJEDEC1)fortargetapplications CoolMOSCPisdesignedfor: •Hard-&softswitchingSMPStopologies

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    IPI50R299CP

  • 功能描述:

    MOSFET CoolMOS Power Transistor

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
TO-262
12500
只做原厂渠道 可追溯货源
询价
Infineon(英飞凌)
24+
TO-262
7793
支持大陆交货,美金交易。原装现货库存。
询价
Infineon
24+
TO220-3
17900
MOSFET管
询价
INFINE0N
23+
TO-262-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINEON
09+PBF
TO-262
12500
现货
询价
INFINEON/英飞凌
22+
TO-262
20000
保证原装正品,假一陪十
询价
INFINEON/英飞凌
23+
TO-262
50000
全新原装正品现货,支持订货
询价
INFINEON
23+
TO-262
50000
全新原装正品现货,支持订货
询价
INFINEON
21+
TO-262
10000
原装现货假一罚十
询价
INFINEON/英飞凌
2022+
TO-262
12500
原厂代理 终端免费提供样品
询价
更多IPI50R299CP供应商 更新时间2025-5-27 16:36:00