丝印：038N15N6；Package：PG-TO263-3；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：725.48 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS ™ 6 功率 MOSFET 150 V 正常电平，采用 D²PAK 3 引脚封装

IPB038N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market.\n OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching. • Very low RDS(on)\n• Industry's lowest Qrr in 150 V\n• Improved diode softness vs OptiMOS™ 5\n• Tight Vgs(th) spread of +/-500 mV\n• High avalanche ruggedness\n• Max Tj of 175°C and MSL1\n\n优势:\n• Low conduction and switching losses\n• Stable operation with improved EMI\n• Better current sharing wh;

Infineon

英飞凌

MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：893.69 Kbytes 页数：11 Pages

Infineon

英飞凌

TO-263

Infineon

英飞凌

上传：深圳诚思涵科技有限公司

TO-263

INFINEON/英飞凌

上传：深圳市周芯芯半导体有限公司