IPB048N15N5

20V-300V N-Channel Power MOSFET; • 降低 RDS(on)而不影响 FOMgd和 FOMoss\n• 降低输出电荷\n• 超低反向恢复电荷\n• 提高换流坚固性\n• 可以提高开关频率\n\n优势:\n• 减少并联\n• 使用出色的 SuperSO8 缩小尺寸\n• 更高的功率密度设计\n• 更坚固的产品\n• 降低系统成本\n• 改善电磁干扰行为\n;

英飞凌推出的 OptiMOS™5 150V 功率 MOSFET 特别适合叉车和电动脚踏车等低压驱动器以及通信和太阳能应用。产品突破性地降低了 R DS(on)（与 SuperSO8 中的下一个理想替代品相比高达 25％）和 Q rr，而不影响 FOM gd 和 FOM OSS，从而在优化系统效率的同时有效减少设计工作量。此外，超低反向恢复电荷（在 SuperSO8 中，Q rr = 26 nC）提高了换流坚固性。\n

IPB048N15N5

OptiMOS짧5 Power-Transistor, 150 V

IPB048N15N5LF

Combining a low RDS(on) with a wide safe operating area (SOA); • Combination of low R DS(on) and wide safe operating area (SOA)\n• High max. pulse current\n• High continuous pulse current\n\n优势:\n• Rugged linear mode operation\n• Low conduction losses\n• Higher in-rush current enabled for faster start-up and shorter down time\n;

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.\n

IPB048N15N5LF

丝印：048N15LF；Package：PG-TO263-3；OptiMOSTM 5 Linear FET, 150 V

IPB048N15N5LF

isc N-Channel MOSFET Transistor

IPB048N15N5LFATMA1

OptiMOSTM 5 Linear FET, 150 V