IPB054N08N3-G说明书PDF资料供应代理英飞凌-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPB054N08N3-G	文件：526.21 Kbytes Page：11 Pages	OptiMOS 3 Power-Transistor Features N-channel, normal level Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：526.21 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon
IPB054N08N3G	文件：244.86 Kbytes Page：2 Pages	Isc N-Channel MOSFET Transistor 文件：244.86 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IPB054N08N3G	文件：526.21 Kbytes Page：11 Pages	OptiMOS 3 Power-Transistor Features N-channel, normal level Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：526.21 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon
IPB072N15N3G	文件：0 bytes Page：0 Pages	TO247	INFINEON/英飞凌上传：深圳庞田科技有限公司	INFINEON/英飞凌
IPB072N15N3GMOS(场效应管)	文件：0 bytes Page：0 Pages	TO247	INFINEON/英飞凌上传：深圳庞田科技有限公司	INFINEON/英飞凌

更多IPB054N08N3-G供应商更新时间2025-10-18 13:36:00