分立式IGBT

RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. • Optimized parameters for up to 20% lower switching losses\n• Operating range of DC to 30kHz\n• Max junction temperature 175°C\n• Short circuit capability of 5µs\n• Very tight parameter distribution\n• Best in class current versus package size performance\n• Smooth switching performance leading;

Infineon

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT TRENCH 600V 8A TO252-3

Infineon

英飞凌

600 V、4 A IGBT 分立器件，带反向导电驱动 2 个二极管，采用 TO-252 封装

\n优势:\n• Low switching loses on competitive price\n• Improved controllability\n• Humidity Ruggedness improvement\n• Easy to design in products – drop in SMD replacement in DPAK and SOT\n• High system realibility\n• Enable inverterization of Small Appliance application with SOT;

Infineon

英飞凌

分立式IGBT

The RC-Drives 600 V, 4 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous an • Optimized parameters for up to 20% lower switching losses\n• Operating range of DC to 30 kHz\n• Max junction temperature 175°C\n• Short circuit capability of 5µs\n• Very tight parameter distribution\n• Best in class current versus package size performance\n• Smooth switching performance leadin;

Infineon

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 8A 75W TO252-3

Infineon

英飞凌