IKD04N60RF数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

The RC-Drives 600 V, 4 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives.

特性 Features

• Optimized parameters for up to 20% lower switching losses
• Operating range of DC to 30 kHz
• Max junction temperature 175°C
• Short circuit capability of 5µs
• Very tight parameter distribution
• Best in class current versus package size performance
• Smooth switching performance leading to low EMI levels

优势:
• Excellent cost/performance for hard switching applications
• Outstanding temperature stability
• Very good EMI behavior
• Up to 60% space saving on the PCB
• Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching

应用 Application

• Washing machines
• General purpose inverters
• Aircon compressors
• Hard switching topologies up to 1.0 kW

简介

IKD04N60RF属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IKD04N60RF晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。