IGBT with integrated diode in packages offering space saving advantage

文件：1.92867 Mbytes 页数：16 Pages

Infineon

英飞凌

RC-Drive and RC-Drive Fast

文件：368.29 Kbytes 页数：2 Pages

Infineon

英飞凌

?쏳C-D Fast?? RC-Drives IGBT optimized for high switching frequency

文件：886.12 Kbytes 页数：16 Pages

Infineon

英飞凌

IGBT with integrated diode in packages offering space saving advantage

文件：1.92867 Mbytes 页数：16 Pages

Infineon

英飞凌

Optimized Eon, Eoff and Qrr for low switching losses

文件：1.75761 Mbytes 页数：16 Pages

Infineon

英飞凌

分立式IGBT

The RC-Drives 600 V, 4 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous an • Optimized parameters for up to 20% lower switching losses\n• Operating range of DC to 30 kHz\n• Max junction temperature 175°C\n• Short circuit capability of 5µs\n• Very tight parameter distribution\n• Best in class current versus package size performance\n• Smooth switching performance leadin;

Infineon

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 8A 75W TO252-3

Infineon

英飞凌

Optimized Eon, Eoff and Qrr for low switching losses

Infineon

英飞凌