Locking Devices

文件：3.83504 Mbytes 页数：81 Pages

COOPER

N-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operation area • Improved high temperature reliability

文件：273.52 Kbytes 页数：5 Pages

Samsung

三星

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS

文件：164.92 Kbytes 页数：5 Pages

Fairchild

仙童半导体

TRANSISTORS N-CHANNEL

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET® technology is the key to International Rectifiers advanced line of power MOSFET transistor. FEATURES: ■ Repetitive Avalanche Ratings ■ Dynamic dv/dt Ratings ■ Simple Drive Requirement ■ Ease of Paralleling

文件：554.36 Kbytes 页数：8 Pages

IRF