IGLD60R190D1

CoolGaN™600V 电子模式功率晶体管IGLD60R190D1具有极高的效率和可靠性; \n优势:\n;

IGLD60R190D1 CoolGaN™600V 增强型功率晶体管提供快速的开关速度和最小的开关损耗， 并实现最高效率的简单半桥拓扑结构。.\n CoolGaN™600V系列符合全面为GaN而定制的认证，远远超出现有标准。 它针对数据通信和服务器开关电源，电信以及适配器，充电器，无线充电以及其他需要最高效率或功率密度的应用。\n

IGLD60R190D1

丝印：60R190D1；Package：PG-LSON-8-1；600V CoolGaN??enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforindustrialapplicationsaccordingtoJEDEC Standards(JESD

IGLD60R190D1S

丝印：60S190D1；Package：PG-LSON-8-1；600V CoolGaN™ enhancement-mode Power Transistor

Features Enhancementmodetransistor–NormallyOFFswitch Ultrafastswitching Noreverse-recoverycharge Capableofreverseconduction Lowgatecharge,lowoutputcharge Superiorcommutationruggedness QualifiedforstandardgradeapplicationsaccordingtoJEDEC Standards

IGLD60R190D1S

GaN transistors (GaN HEMTs); • E-mode HEMT – normally OFF\n• Ultra fast switching\n• No reverse-recovery charge\n• Capable of reverse conduction\n• Low gate charge, low output charge\n• Superior commutation ruggedness\n• Consumer-grade qualification\n• Bottom-side cooled\n\n优势:\n• Improves system efficiency\n• Improves power density\n• Enables higher operating frequency\n• System cost reduction savings\n• Reduces EMI\n;

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability\n

IGW100N60H3

Infineon
TO-247-3