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IGC019S06S1中文资料CoolGaN™ Transistor 60 V G3 in PQFN 3x5, 1.3 mΩ数据手册Infineon规格书
IGC019S06S1规格书详情
特性 Features
• 60 V e-mode power transistor
• Dual-side cooled package
• No reverse recovery charge
• Reverse conduction capability
• Low gate charge, low output charge
• Qualified according to JEDEC
优势:
• Best-in-class power density
• Highest efficiency
• Improved thermal management
• Enabling smaller and lighter designs
• Excellent reliability
• Lowering BOM cost
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
N/A |
15000 |
英飞凌MOS管、IGBT大量有货 |
询价 | ||
INFINEON |
23+ |
7000 |
询价 | ||||
INFINEON |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
询价 | ||
INFINEON |
TO-252 |
22+ |
10000 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
INFINEON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IDEA |
2000 |
公司优势库存 热卖中!! |
询价 | ||||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 | |||
23+ |
65480 |
询价 | |||||
INFINEON |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
询价 |
