丝印：19SC1；Package：PG-TSON-6；CoolGaNTM Transistor 60 V G3

Features • Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse conduction capability • Low gate charge, low output charge • Qualified according to JEDEC for target applications

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CoolGaN™ Transistor 60 V G3 in PQFN 3x5, 1.3 mΩ

• 60 V e-mode power transistor\n• Dual-side cooled package\n• No reverse recovery charge\n• Reverse conduction capability\n• Low gate charge, low output charge\n• Qualified according to JEDEC\n\n优势:\n• Best-in-class power density\n• Highest efficiency\n• Improved thermal management\n• Enabling small;

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IPM模块

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上传：深圳市正纳电子有限公司

INFINEON/英飞凌
IPM模块

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IGBT

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