丝印：IDW；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：D100E60；Package：PG-TO-247-3；Fast Switching EmCon Diode

Features: • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175 °C junction operating temperature • Easy paralleling • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com

文件：188.56 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：D1065C5；Package：PG-TO247-3；5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified accordin

文件：1.1747 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：C20ED2；Package：PG-TO247-3；Emitter Controlled Diode Rapid 2 Common Cathode Series

Features: •QualifiedaccordingtoJEDECfortargetapplications •650VEmitterControlledtechnology •Fastrecovery •Softswitching •Lowreverserecoverycharge(Qrr) •Lowforwardvoltage(VF)andstableovertemperature •175°Cjunctionoperatingtemperature •Easyparalleling •Pb-freeleadplating •RoHScompliant

文件：1.58275 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：D2065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm

文件：1.1743 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：C30ED1；Package：PG-TO247-3；Emitter Controlled Diode Rapid 1 Common Cathode Series

Features: •QualifiedaccordingtoJEDECfortargetapplications •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Ultrafastrecovery •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •175°Cjunctionoperatingtemperature •Pb-freeleadpl

文件：1.62764 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：D3065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therma

文件：1.17544 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：D4065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm

文件：1.17583 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：E100MD7；Package：PG-TO247-2-STD-NA8.8；Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode for both Industrial and Home Appliance applications

Features • VRRM = 1200 V • IF = 100 A • 1200 V emitter controlled technology • Maximum junction temperature Tvjmax = 175°C • Low forward voltage (VF) • Low reverse recovery charge • Ultrafast recovery times • Soft recovery characteristics • Pb-free lead plating; RoHS compliant • Humidity

文件：1.19596 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：E100EE7；Package：PG-TO247-2-STD-NA8.8；The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability for both Industrial and Home Appliance applications

Features • VRRM = 650 V • IF = 100 A • Low and temperature stable forward voltage (VF) • Very soft and fast recovery • Low reverse recovery current (Irrm) • Humidity robust design • Cosmic ray ruggedness • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for targ

文件：1.31168 Mbytes 页数：11 Pages

Infineon

英飞凌