IDW40G65C5分立半导体产品的二极管-整流器-单规格书PDF中文资料

IDW40G65C5属于分立半导体产品的二极管-整流器-单。由英飞凌科技股份公司制造生产的IDW40G65C5二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。

1 Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

Schottky Barrier diodes. Thanks to the more compact design and thin-wafer

technology, the new family of products shows improved efficiency over all load

conditions, resulting from both the improved thermal characteristics and a lower

figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V

CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.

Features

 Revolutionary semiconductor material - Silicon Carbide

 Benchmark switching behavior

 No reverse recovery/ No forward recovery

 Temperature independent switching behavior

 High surge current capability

 Pb-free lead plating; RoHS compliant

 Qualified according to JEDEC1) for target applications

 Breakdown voltage tested at 88 mA2)

 Optimized for high temperature operation

Benefits

 System efficiency improvement over Si diodes

 System cost / size savings due to reduced cooling requirements

 Enabling higher frequency / increased power density solutions

 Higher system reliability due to lower operating temperatures

 Reduced EMI