丝印：IDY；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：D1020C5；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ Schottky diode 2000 V G5

Features • VRRM = 2000 V • IF = 10 A • VF = 1.5 V • No reverse recovery current / no forward recovery • High surge current capability • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage distribution • Specified dv/d

文件：1.08255 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：D2520C5；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ Schottky diode 2000 V G5

Features • VRRM = 2000 V • IF = 25 A • VF = 1.5 V • No reverse recovery current / no forward recovery • High surge current capability • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage distribution • Specified dv/d

文件：996.36 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：D4020C5；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ Schottky diode 2000 V G5

Features • VRRM = 2000 V • IF = 40 A • VF = 1.5 V • No reverse recovery current / no forward recovery • High surge current capability • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage distribution • Specified dv/d

文件：1.06539 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：D5020C5；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ Schottky diode 2000 V G5

Features • VRRM = 2000 V • IF = 50 A • VF = 1.5 V • No reverse recovery current / no forward recovery • High surge current capability • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage distribution • Specified dv/d

文件：1.0757 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：D8020C5；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ Schottky diode 2000 V G5

Features • VRRM = 2000 V • IF = 80 A • VF = 1.5 V • No reverse recovery current / no forward recovery • High surge current capability • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage distribution • Specified dv/d

文件：1.04316 Mbytes 页数：10 Pages

Infineon

英飞凌

2nd Generation thinQ! SiC Schottky Diode

文件：1.40456 Mbytes 页数：10 Pages

Infineon

英飞凌

2nd Generation thinQ! SiC Schottky Diode

文件：1.40688 Mbytes 页数：10 Pages

Infineon

英飞凌