650V SiC thinQ!??Generation 5 diodes

Features ■ V₂ at 650V Improved Figure of Merit (Q x V) ■ No reverse recovery charge ■ Soft switching reverse recovery waveform ■ Temperature independent switching behavior High operating temperature (₁175°C) ■ Improved surge capability ■ Pb-free lead plating ☐10 years manufacturing of

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INFINEON

英飞凌

丝印：D3065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therma

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INFINEON

英飞凌

SiC Schottky DIODE

FEATURES ·High Surge current capability ·Temperature Independent Swithing Behavior ·No Reverse Recovery ·No Forward Recovery APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·Power Factor Correction

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ISC

无锡固电

采用 real2pin 封装的 650 V 碳化硅肖特基二极管

CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics a • V br at 650V\n• Improved figure of merit (Q c x V f)\n• No reverse recovery charge\n• Soft switching reverse recovery waveform\n• Temperature independent switching behavior\n• High operating temperature (T j max 175°C)\n• Improved surge capability\n• Pb-free lead plating\n\n优势:\n• Higher safety ma;

Infineon

英飞凌

SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therma

文件：1.17544 Mbytes 页数：11 Pages

INFINEON

英飞凌

ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

文件：1.17616 Mbytes 页数：11 Pages

INFINEON

英飞凌

Package：TO-247-3；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 30A TO247-3

INFINEON

英飞凌

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 30A TO247-3

INFINEON

英飞凌